Major Research Areas

Various beamlines available at Indus Synchrotron complex at RRCAT are being utilized to investigate semiconductor epitaxial layers, heterostructures and quantum wells. Interesting details on fundamental physical mechanism occurring in the samples can be probed with the help of these tools which is otherwise not possible from the laboratory based systems. The information thus obtained is quite useful, which along with the results obtained from various lab-source based techniques provide an in-depth characetrization of the epitaxial samples. In particular, the following beamlines are used:

• Scanning EXAFS beamline (BL-9)
• Angle dispersive X-ray diffraction (ADXRD) beamline (BL-12)
• Angle integrated photoelectron spectroscopy beamline on Indus-1

Selected publications

1. Effect of germanium auto diffusion on the bondlengths of Ga and P atoms in GaP/Ge(111) investigated by using X-ray absorption spectroscopy, R. Roychowdhury, P. Rajput, Shailendra Kumar, R. Kumar, A. Bose, S. N. Jha, T. K. Sharma and V. K. Dixit, J. Synchrotron Rad. 28, 480 (2021).
2. A simple method to overcome the limitation of hybrid monochromator in the identification of peaks in the HRXRD pattern of Al0.4Ga0.6N/Al0.6Ga0.4N multi quantum wells, T. K. Sharma, R Kumar, A. K. Sinha, P Pramanik, S Sen, and A Bhattacharyya, Mat. Sci. & Eng. B 240, 92 (2019).
3. Study of the microstructure information of GaAs epilayers grown on silicon substrate using synchrotron radiation, Ravi Kumar, V. K. Dixit, A. K. Sinha, Tapas Ganguli, C. Mukherjee, S. M. Oak and T. K. Sharma, J. Synchrotron Rad. 23, 238 (2016).
4. Crystalline and band alignment properties of InAs/Ge (111) heterostructure, S. Pal, S. D. Singh, V. K. Dixit, T. K. Sharma, R. Kumar, A. K. Sinha, V. Sathe, D. M. Phase, C. Mukherjee, A. Ingale, J. Alloys and Compounds 646, 393 (2015).