Materials Science Section

Recent Publications

I. In Journals

  1. Shailesh K. Khamari, S. Porwal, and T. K. Sharma,
    “Temperature dependent spin Hall conductivity in n-GaAs epitaxial layers measured by inverse spin Hall effect”,
    J. Appl. Phys. 124, 065702 (2018)

  2. S. Haldar, A. Banerjee, Geetanjali Vashisht, S. Porwal, T.K. Sharma, and V.K. Dixit,
    “A parallel magnetic field driven confinement versus separation of charges in GaAs quantum well investigated by magneto-photovoltage and magneto-photoluminescence spectroscopy”,
    J. Lumin. 206, 342 (2019).

  3. Abhishek Chatterjee, V. K. Agnihotri, S. K. Khamari, S. Porwal, A. Bose, S. C. Joshi and T. K. Sharma,
    “Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors”,
    J. Appl. Phys. 124, 104504 (2018)

  4. Geetanjali Vashisht, V. K. Dixit, S. Haldar and T. K. Sharma,
    “Effect of disorders on the optical properties of excitons in InAsP/InP quantum wells investigated by magneto-photoluminescence spectroscopy”,
    J. Opt. Soc. America B 35, 2405 (2018)

  5. S. Haldar, V. K. Dixit, Geetanjali Vashisht, S. Porwal and T. K. Sharma,
    “Radiative and non-radiative recombination of thermally activated magneto-excitons probed via quasi-simultaneous photoluminescence and surface-photovoltage spectroscopy”,
    J. Appl. Phys. 124, 055704 (2018)

  6. R. Kumar, V. K. Dixit, C. Mukherjee and T. K. Sharma,
    “Anisotropic distribution of microstructure in compressively strained InP/GaAs epitaxial layers”,
    Superlattices and Microstructure, 122, 636 (2018)

  7. R. Kumar, V. K. Dixit, and T. K. Sharma,
    “Anisotropic distribution of dislocations density in tensile strained GaP/GaAs epilayers”,
    Vacuum 154, 214 (2018).

  8. Abhishek Chatterjee, S. K. Khamari, S. Porwal, S. Kher, and T. K. Sharma,
    “Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors”,
    J. Appl. Phys. 123, 161585 (2018)

  9. Dipankar Jana, S. Porwal, and T. K. Sharma,
    “Identification of the spatial location of deep trap states in AlGaN/GaN heterostructures by Surface Photovoltage Spectroscopy”,
    Superlattice & Microstructure112, 249 (2017)

  10. Dipankar Jana, and T. K. Sharma,
    “A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures”,
    J. Appl. Phys. 122, 035101 (2017)

  11. S. K. Khamari, S. Porwal, V.K. Dixit and T. K. Sharma,
    “Estimation of electron spin polarization from circularly polarized Photoluminescence in strained quantum wells”,
    J. Appl. Phys. 122, 25703 (2017).

  12. S. Haldar, V. K. Dixit, Geetanjali Vashisht, Shailesh Kumar Khamari, S. Porwal, T. K. Sharma, and S. M. Oak,
    “Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in AlxGa1−xAs/GaAs quantum wells by magneto-photoluminescence”,
    Nature Scientific Reports 7, 4905 (2017).

  13. S. Haldar, V. K. Dixit, G. Vashisht, S. Porwal, T. K. Sharma,
    "Effect of magnetic field on free and bound exciton luminescence in GaAs/AlGaAs multiple quantum well structure: A quantitative study on the estimation of ultra-low disorder",
    J. Phys. D: Appl. Phys. 50, 335107 (2017).

  14. S Pal , C. C. Mukherjee, V. G. Sathe , R. Kumar , P. Tiwari , V. K. Dixit , T. K. Sharma,
    "Self-catalyst assisted and catalyst-free epitaxial growth of InAs on Ge (111): Role of substrate surface and evolution of polytypism"
    J. Vac. Sci. Technol. A, 35, 06150 (2017).

  15. R. Roychowdhury, Shailendra Kumar, A. Wadikar, C. Mukherjee, K. Rajiv, T. K. Sharma, V.K. Dixit,
    “Role of surface energy on the morphology and optical properties of GaP micro & nano structures grown on polar and non-polar substrates”,
    Appl. Surf. Sci. 419 957 (2017).

II. In Conference Proceedings

  1. Abhishek Chatterjee, S. K. Khamari, S. Porwal and T. K. Sharma,
    “Impact of post deposition annealing of ZrO2 insulating layer on the performance of GaN metal-semiconductor-metal ultraviolet photodetectors”,
    4th Int. Conference on Emerging Electronics (ICEE), Indian Institute of Science (IISc) Bangalore. Dec. 16-19, 2018.

  2. Priyabrata Mudi, Shailesh K. Khamari, and T. K. Sharma,
    “Observation of Strong Photo Induced Inverse Spin Hall Effect in Heavily Doped n-GaAs”
    63rd DAE Solid State Physics Symposium (DAE-SSPS), Guru Jambheshwar University of Science and Technology, Hisar, Haryana, Dec. 18-22, 2018. (J0017)

  3. Payal Taya, V. K. Singh, Dipankar Jana, Renu Tyagi and T. K. Sharma,
    “Optical Characterization of InAlN/AlN/InGaN/GaN/Sapphire High Electron Mobility Transistor Structures”
    63rd DAE Solid State Physics Symposium (DAE-SSPS), Guru Jambheshwar University of Science and Technology, Hisar, Haryana, Dec. 18-22, 2018. (J0026)

  4. S. Haldar, Geetanjali Vashisht, U. K. Ghosh, A. K. Jaiswal, S. Porwal, A. Khakha, T. K. Sharma, and V. K. Dixit,
    “Development of a Simple Cost-effective Maskless-Photolithography System”
    63rd DAE Solid State Physics Symposium (DAE-SSPS), Guru Jambheshwar University of Science and Technology, Hisar, Haryana, Dec. 18-22, 2018. (D0027)

  5. Heena Darji, Geetanjali Vashisht, R. Roychowdhury, S. Haldar, S. K. Khamari, V. K. Dixit, T. K. Sharma,
    “Role of Surface and Interface States on the Performance of the GaAs based Photodetectors”
    National conference on physics and chemistry of materials, Holkar Science college, Indore Dec. 2018.

  6. Aarathy E.R., Vashisht G., Haldar S., Roychowdhury R., Porwal S., Chatterjee A., Khakha A., Khamari S.K., Sharma T.K., Dixit V.K.
    Investigations on InGaAs/GaAs quantum well based symmetric and asymmetric waveguide laser diode structures,
    27th DAE-BRNS National Laser Symposium (NLS-27), Indore, Dec. 3-6, 2018.

  7. Haldar S., Vashisht G., Porwal S., Sharma T.K., Dixit V.K.
    Effect of magnetic field on the radiative recombination efficiency of excitons and trions in GaAs/AlGaAs quantum well,
    27th DAE-BRNS National Laser Symposium (NLS-27), Indore, Dec. 3-6, 2018.

  8. Abhishek Chatterjee, Shailesh Khamari, S. Porwal and T. K. Sharma,
    “Effect of capacitance hysteresis on the performance of GaN metal-oxide- semiconductor photodetectors”,
    XIX Int. Workshop on The Physics of Semiconductor Devices, IIT Delhi, Dec. 11-15, 2017.

  9. Dipankar Jana, S. Porwal, and T. K. Sharma,
    “Compensation of unintentional donors in AlGaN/GaN HEMT structures by Mg-doping during initial growth of GaN buffer layer”,
    XIX Int. Workshop on The Physics of Semiconductor Devices, IIT Delhi, Dec. 11-15, 2017.

  10. S. Haldar, Geetanjali Vashisht, S. Porwal, T. K. Sharma, and V.K. Dixit,
    “Effect of barrier layer on the effective mass of excitons in GaAs/AlxGa1-xAs QWs investigated via Magneto-PL spectroscopy”,
    XIX Int. Workshop on The Physics of Semiconductor Devices, IIT Delhi, Dec. 11-15, 2017

    .
  11. Geetanjali Vashisht, S. Haldar, S. Porwal, R. Kumar, T. K. Sharma and V. K. Dixit,
    “InAsP/InP multiple quantum well based IR detectors with enhanced spectral photoresponse”,
    XIX Int. Workshop on The Physics of Semiconductor Devices, IIT Delhi, Dec. 11-15, 2017.

  12. Ravi Kumar, V. K. Dixit, and T. K. Sharma,
    “Anisotropic Distribution of Dislocations Density in Tensile Strained GaP/GaAs Epilayers”,
    Int. Conference on Thin Films (ICTF-17), NPL, New Delhi, 13-17 Nov. 2017.

  13. Dipankar Jana and T. K. Sharma,
    “Spectroscopic Characterization of Defects in AlGaN/GaN Heterostructures”,
    Int. Symposium on Semiconductor Material and Devices (ISSMD-4), 8-10 March, 2017, Jadavpur University, Kolkata, India

  14. Abhishek Chatterjee, Mohit Gupta, V. K. Agnihotri, S. Porwal and T. K. Sharma,
    "Reactive ion etching induced damage in n-type GaN and its recovery by treatment with O2 plasma",
    Int. Symposium on Semiconductor Material and Devices (ISSMD-4), 8-10 March, 2017, Jadavpur University, Kolkata, India.

  15. R. Roychowdhury, P. Rajput, S. Kumar, S. N. Jha, T. K. Sharma, V. K. Dixit,
    “X-ray Absorption Spectroscopy of GaP/Ge (111) using Synchrotron Source”,
    Int. Symposium on Semiconductor Material and Devices (ISSMD-4), 8-10 March, 2017, Jadavpur University, Kolkata, India.

Best viewed in 1024x768 resolution