Recent Publications

I. In Journals

1. Role of Intra-Band Relaxation of Holes and Tunneling of Electrons in Carrier Relaxation in AlGaAs/GaAs Quantum Well, Saleem Khan, Salahuddin Khan, Jesumani Jayabalan, Shailesh Kumar Khamari, Tarun Kumar Sharma, Phys. Status Solidi B 2100329 (2022)
   
   
2. Excitation density dependent carrier dynamics in a monolayer MoS2: Exciton dissociation, formation, bottlenecking, Durga Prasad Khatua, Asha Singh, Sabina Gurung, and J. Jayabalan, Micro and Nanostructures (2022).
   
   
3. A comparative study of ultrafast carrier dynamics near A, B, and C-excitons in a monolayer MoS2 at high excitation densities, Durga Prasad Khatua, Asha Singh, Sabina Gurung, Manushree Tanwar, Rajesh Kumar, and J. Jayabalan, Optical Materials 126, 112224 (2022).
   
   
4. Ultrafast carrier dynamics in a monolayer MoS2 at carrier densities well above Mott density, Durga Prasad Khatua, Asha Singh, Sabina Gurung, Salahuddin Khan, Manushree Tanwar, Rajesh Kumar, and J Jayabalan, Journal of Physics: Condensed Matter 34 (15), 155401 (2022).

1. Effect of spectral overlap and mixing ratio on metal-semiconductor mixed colloid, Sabina Gurung, Asha Singh and J Jayabalan Phys. Scripta 96 125855 (2021)
   
   
2. Ultrafast Carrier Dynamics in Ag-CdTe Hybrid Nanostructure: Non-radiative and Radiative Relaxations, Sabina Gurung, Durga Prasad Khatua, Asha Singh, J Jayabalan, Journal of Physics: Condensed Matter 33 (18), 185702 (2021).
   
   
3. Signature of linear-in-k Dresselhaus splitting in the spin relaxation of X-valley electrons in indirect band gap AlGaAs, Priyabrata Mudi, Shailesh K Khamari, Joydipto Bhattacharya, Aparna Chakrabarti and T K Sharma, Phys. Rev. B. 104, 115202 (2021).
   
   
4. Contribution of inter-valley scattering in governing the steady state optical spin orientation in AlxGa1−xAs, Priyabrata Mudi, Shailesh K Khamari, and T K Sharma, J. Phys. D: Appl. Phys. 54, 495107 (2021).
   
   
5. Impact of built-in electric field on the emission characteristics of InAs/GaAs quantum dot laser structure, N. Gupta, P. Mudi, A. Yelashetty, T. K. Sharma, and Devnath Dhirhe, Phy. Stat. Sol. (b), 2100090 (2021).
   
   
6. Prediction of inverse spin Hall devices based on the direct injection of carriers in L-valley of GaAs, Priyabrata Mudi, Shailesh K Khamari, and T K Sharma, J. Phys. D: Appl. Phys. 54, 205101 (2021).
   
   
7. Static and Ultrafast Optical Response of Two Metal Nanoparticles Glued with a Semiconductor Quantum Dot, Sabina Gurung, Asha Singh, Durga Prasad Khatua, Himanshu Srivastava, and J. Jayabalan, Photonics Nanostructures: Fundam. Appl. 43, 100869 (2021).
   
   
8. Effect of germanium auto diffusion on the bondlengths of Ga and P atoms in GaP/Ge(111) investigated by using X-ray absorption spectroscopy, R. Roychowdhury, P. Rajput, Shailendra Kumar, R. Kumar, A. Bose, S. N. Jha, T. K. Sharma and V. K. Dixit, J. Synchrotron Rad. 28, 480 (2021).
   
   
9. Mapping of the electronic work function anisotropy of RF sputtered molybdenum thin film electrodes for piezoelectric devices, Neha Sharma, Ravi Kumar, J. Jayabalan, Curr. Appl. Phys. 21, 58 (2021).
   
   
10. Investigation of optical and spectroscopic properties of Nd co-doped Yb:YVO4 single crystals grown by OFZ method, M. Soharab, Indranil Bhaumik, R. Bhatt, A. Saxena, S. Khan, U.K. Goutam, A. K. Karnal, Journal of Luminescence 231, 117736 (2021).

1. Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors, A Chatterjee, Shailesh K Khamari, R Kumar, S Porwal, A Bose, T. K. Sharma, Superlattices and Microstructures 148, 106733 (2020).
   
   
2. Filtering Noise in Time and Frequency Domain for Ultrafast Pump-Probe Performed Using Low Repetition Rate Lasers, Durga Prasad Khatua, Sabina Gurung, Asha Singh, Salahuddin Khan, Tarun Kumar Sharma, and J. Jayabalan, Rev. Sci. Instrum. 91, 103901 (2020).
   
   
3. Role of Hot Electrons in the Development of GaAs‐Based Spin Hall Devices with Low Power Consumption, Priyabrata Mudi, Shailesh K Khamari, Tarun K Sharma, Phys. Status Solidi RRL 14, 2000097 (2020).
   
   
4. Anisotropic magnetic properties of excitons in GaAs multiple quantum wells, S. Haldar, A. Banerjee, Kranti Kumar, R. Kumar, Geetanjali Vashisht, T. K. Sharma, and V.K. Dixit, Superlattices and Microstructure 137, 106332 (2020).
   
   
5. Optimization of the growth of GaN epitaxial layers in an indigenously developed MOVPE system, Abhishek Chatterjee, V. K. Agnihotri, R. Kumar, S. Porwal, A. Khakha, Jayaprakash G., Tapas Ganguli and T. K. Sharma, Sadhana 45, 249 (2020).
   
   
6. Confirmation of the compensation of unintentional donors in AlGaN/GaN HEMT structures by Mg-doping during initial growth of GaN buffer layer, Dipankar Jana, Abhishek Chatterjee, T. K. Sharma, J. Lumin. 219, 116904 (2020).
   
   
7. Unraveling relation between nonlinear absorption and structure of push pull ornamented anthracenyl chalcone derivatives, Amrita Saha, Asha Singh, Rama Chari, and J. Jayabalan, J. of Molecular Structure 1219, 128578 (2020).
   
   
8. Growth and optical investigation of Nd co-doped Yb:YVO4 crystal: A promising material for laser gain medium, Soharab M., Bhaumik I., Bhatt R., Saxena A., Khan S., Sagdeo A., Karnal A.K. Optical Materials 109, 110183 (2020).
   
   
9. Photovoltaic Response and Charge Redistribution Processes in GaAs/AlGaAs Multiple-Quantum Wells Structure, S. Haldar, Shailendra Kumar, Rijul Roychowdhury, and V. K. Dixit, Phys. Status Solidi B 257, 2000331 (2020).
   
   
10. Studies on DC transport and terahertz conductivity of granular molybdenum thin films for microwave radiation detector applications, Shilpam Sharma, Ashish Khandelwal, Edward Prabu Amaladass, S. Abhirami, S. K. Ramjan, J. Jayabalan, Awadhesh Mani, and M. K. Chattopadhyay, J. Appl. Phys. 128, 183901 (2020).
    
    
11. Role of AlN spacer layer and GaN back barrier on the optoelectronic properties of AlGaN/AlN/InGaN/GaN High Electron Mobility Transistors, Payal Taya, Abhishek Chatterjee, A. Bose, V.K. Singh, Renu Tyagi and T. K. Sharma, AIP Conf. Proc. 2265, 030484 (2020).

1. Role of ZrO2 Passivation Layer Thickness in the Fabrication of High Responsivity GaN Ultraviolet Photodetectors, Abhishek Chatterjee, Shailesh K. Khamari, S. Porwal and T. K. Sharma, Phys. Status Solidi RRL 13, 1900265 (2019).
   
   
2. Theoretical prediction and experimental demonstration of inter-valley scattering induced Inverse Spin Hall effect for hot electrons in GaAs,Priyabrata Mudi, Shailesh K. Khamari, and T. K. Sharma, J. Appl. Phys. 126, 065703 (2019).
   
   
3. Counting the Electrons Hopping in Ultrafast Time Scales in an Ag–CdTe Hybrid Nanostructure, Asha Singh, Sabina Gurung, Rama Chari, and J. Jayabalan, J. Phys. Chem. C 123, 28584 (2019).
   
   
4. Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy, Shailesh K. Khamari, P. Mudi, S. Porwal, T. K. Sharma, J. Luminescence 213, 204 (2019).
   
   
5. A parallel magnetic field driven confinement versus separation of charges in GaAs quantum well investigated by magneto-photovoltage and magneto-photoluminescence spectroscopy, S. Haldar, A. Banerjee, Geetanjali Vashisht, S. Porwal, T. K. Sharma, and V.K. Dixit, J. Lumin. 206, 342 (2019).
   
   
6. Simultaneous magneto-electro-optical measurements in modulation doped quantum well: An investigation on magnetophotoluminescence intensity oscillations, S. Haldar, Geetanjali Vashisht, S. Porwal, T. K. Sharma, and V. K. Dixit, J. Appl. Phys. 125, 205701 (2019).
   
   
7. Surface and interface properties of ZrO2/GaAs, SiO2/GaAs and GaP/GaAs hetero structures investigated by surface photovoltage spectroscopy, R. Roychowdhury, V.K. Dixit, Geetanjali Vashisht, T. K. Sharma, C. Mukherjee, S.K. Rai, Shailendra Kumar, Applied Surface Science 476, 615 (2019).
   
   
8. On the determination of alloy composition using optical spectroscopy in MOVPE grown InGaN layers on Si(111), Vikash K. Singh, Payal Taya, Dipankar Jana, Renu Tyagi, S. Raghavan, T. K. Sharma, Superlattices and Microstructures 134, 106234 (2019).
   
   
9. Studies on growth of Au cube-ZnO core-shell nanoparticles for photocatalytic degradation of methylene blue and methyl orange dyes in aqueous media and in presence of different scavengers, Shweta Verma, B. Tirumala Rao, J. Jayabalan, S.K. Rai, D.M. Phase, A.K. Srivastava, R. Kaul, J. Envir. Chem. Eng. 7, 103209 (2019).
   
   
10. Spatial delocalization of absorption and emission process in silicon nanowires, Priyanka Yogi, Puspen Mondal, Salahuddin Khan, Asha Singh, Rama Chari, Rajesh Kumar, and J. Jayabalan, J. Lumin. 214, 116551 (2019).
    
    
11. Giant enhancement of nonlinear absorption in graphene oxide-Sb2Se3 nanowire heterostructure, Rajesh Kumar Yadav, J. Aneesh, Rituraj Sharma, M. Salvi, J. Jayabalan, H. Jain, and K. V. Adarsh, J. Appl. Phys. 125, 025702 (2019).
    
    
12. Spectroscopic properties and Judd-Ofelt analysis of Nd doped GdVO4 single, Soharab M., Bhaumik I., Bhatt R., Saxena A., Khan S., Karnal A. K., Optical Materials 92, 379 (2019).
    
    
13. Optical Characterization of InAlN/AlN/InGaN/GaN/Sapphire High Electron Mobility Transistor structures, Payal Taya, V.K. Singh, Dipankar Jana, Renu Tyagi, T. K. Sharma, AIP Conf. Proc. 2115, 030467 (2019).
    
    
14. A simple method to overcome the limitation of hybrid monochromator in the identification of peaks in the HRXRD pattern of Al0.4Ga0.6N/Al0.6Ga0.4N multi quantum wells, T. K. Sharma, R Kumar, A. K. Sinha, P Pramanik, S Sen, and A Bhattacharyya, Mat. Sci. & Eng. B 240, 92 (2019).

1. Radiative and non-radiative recombination of thermally activated magneto-excitons probed via quasi-simultaneous photoluminescence and surface-photovoltage spectroscopy, S. Haldar, V. K. Dixit, Geetanjali Vashisht, S. Porwal and T. K. Sharma, J. Appl. Phys. 124, 055704 (2018).
   
   
2. The optical response of self-organized Ag-CdTe metal-semiconductor hybrid nanostructures: Change in interaction vs number density variation, Sabina Gurung, Asha Singh, Rama Chari, and J. Jayabalan, J. Appl. Phys. 124, 204305 (2018).
   
   
3. Temperature dependent spin Hall conductivity in n-GaAs epitaxial layers measured by inverse spin Hall effect, Shailesh K. Khamari, S. Porwal, and T. K. Sharma, J. Appl. Phys. 124, 065702 (2018).
   
   
4. Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors, Abhishek Chatterjee, V. K. Agnihotri, S. K. Khamari, S. Porwal, A. Bose, S. C. Joshi and T. K. Sharma, J . Appl. Phys. 124, 104504 (2018).
   
   
5. Effect of disorders on the optical properties of excitons in InAsP/InP quantum wells investigated by magneto-photoluminescence spectroscopy, Geetanjali Vashisht, V. K. Dixit, S. Haldar and T. K. Sharma, J. Opt. Soc. America B 35, 2405 (2018).
   
   
6. Femtosecond laser induced photoluminescence enhancement of TGA-capped CdTe quantum dots, Asha Singh, J. Jayabalan, Salahuddin Khan, Rama Chari, J. Lumin. 194, 45 (2018).
   
   
7. Anisotropic distribution of microstructure in compressively strained InP/GaAs epitaxial layers, R. Kumar, V. K. Dixit, C. Mukherjee and T. K. Sharma, Superlattices and Microstructure 122, 636 (2018).
   
   
8. Anisotropic distribution of dislocations density in tensile strained GaP/GaAs epilayers, R. Kumar, V. K. Dixit, and T. K. Sharma, Vacuum 154, 214 (2018).
   
   
9. Effect of 60Co -irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors, Abhishek Chatterjee, S. K. Khamari, S. Porwal, S. Kher, and T. K. Sharma, J. Appl. Phys. 123, 161585 (2018).
   
   
10. Insulator-metal transitions in the phase Cr-doped and phase undoped thin films, SS Majid, DK Shukla, F Rahman, Khan S., K Gautam, A Ahad, S Francoual, R J Choudhary, VG Sathe, J Strempfer, Physical Review B 98, 075152, (2018).

1. Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in AlxGa1-xAs/GaAs quantum wells by magneto-photoluminescence, S. Haldar, V. K. Dixit, Geetanjali Vashisht, Shailesh Kumar Khamari, S. Porwal, T. K. Sharma, and S. M. Oak, Nature Scientific Reports 7, 4905 (2017).
   
   
2. Identification of the spatial location of deep trap states in AlGaN/GaN heterostructures by Surface Photovoltage Spectroscopy, Dipankar Jana, S. Porwal, and T. K. Sharma, Superlattice & Microstructure 112, 249 (2017).
   
   
3. A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures, Dipankar Jana, and T. K. Sharma, J. Appl. Phys. 122, 035101 (2017).
   
   
4. Estimation of electron spin polarization from circularly polarized Photoluminescence in strained quantum wells, S. K. Khamari, S. Porwal, V.K. Dixit and T. K. Sharma, J. Appl. Phys. 122, 25703 (2017).
   
   
5. Effect of magnetic field on free and bound exciton luminescence in GaAs/AlGaAs multiple quantum well structure: A quantitative study on the estimation of ultra-low disorder, S. Haldar, V. K. Dixit, G. Vashisht, S. Porwal, T. K. Sharma, J. Phys. D: Appl. Phys. 50, 335107 (2017).
   
   
6. Self-catalyst assisted and catalyst-free epitaxial growth of InAs on Ge (111): Role of substrate surface and evolution of polytypism, S Pal , C. C. Mukherjee, V. G. Sathe , R. Kumar , P. Tiwari , V. K. Dixit , T. K. Sharma, J. Vac. Sci. Technol. A 35, 06150 (2017).
   
   
7. Role of surface energy on the morphology and optical properties of GaP micro & nano structures grown on polar and non-polar substrates, R. Roychowdhury, Shailendra Kumar, A. Wadikar, C. Mukherjee, K. Rajiv, T. K. Sharma, V.K. Dixit, Appl. Surf. Sci. 419, 957 (2017).
   
   
8. Significant field emission enhancement in ultrathin nano-thorn covered NiO nano-petals, S. Mishra, P. Yogi, S. K. K. Saxena, J. Jayabalan, P. Behera, P. R. Sagdeo and R. Kumar, J. Mater. Chem. C 5, 9611 (2017).

1. An unambiguous identification of 2D electron gas features in the photoluminescence spectrum of AlGaN/GaN heterostructures, Dipankar Jana and T. K. Sharma, J. Phys. D. Appl. Phys. 49, 265107 (2016).
   
   
2. Observation of anisotropic distribution of microstructure in GaP/GaAs epitaxial layers, Ravi Kumar, V. K. Dixit, Tapas Ganguli, C. Mukherjee, A. K. Srivastava, and T. K. Sharma, J. Appl. Phys. 120, 135307 (2016).
   
   
3. Optical Shielding of Nickel Nanoparticle by a Bubble: Optical Limiting Gets Limited, Vijay Shukla, J. Jayabalan, and Rama Chari, Appl. Phys. Lett. 108, 241909 (2016).
   
   
4. Design, Synthesis and nonlinear optical properties of (E)-1-(4-substituted)-3-(4-hydroxy -3-nitrophenyl) prop-2-en-1-one compounds, Amrita Saha, Vijay Shukla, Sudip Choudhury and J. Jayabalan, Chem. Phys. Lett. 653, 184 (2016).
   
   
5. Size Dependence of Upconversion Photoluminescence in MPA Capped CdTe Quantum Dots: Existence of Upconversion Bright Point, S. Ananthakumar, J. Jayabalan, Asha Singh, Salahuddin Khan, S. Moorthy Babu, Rama Chari, J. Lumin. 169, 308–312 (2016).
   
   
6. Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1-x/InP quantum well detectors, Geetanjali Vashisht, V. K. Dixit, S. Porwal, R. Kumar, T. K. Sharma, and S. M. Oak, J. Appl. Phys. 119, 095708 (2016).
   
   
7. Study of the microstructure information of GaAs epilayers grown on silicon substrate using synchrotron radiation, Ravi Kumar, V. K. Dixit, A. K. Sinha, Tapas Ganguli, C. Mukherjee, S. M. Oak and T. K. Sharma, J. Synchrotron Rad. 23, 238 (2016).
   
   
8. Diffraction efficiency of plasmonic gratings fabricated by electron beam lithography using a silver halide film, Sudheer, S. Porwal, S. Bhartiya, B. T. Rao, P. Tiwari, Himanshu Srivastava, T. K. Sharma, V. N. Rai, A. K. Srivastava, and P. A. Naik, J. Appl. Phys. 120, 043101 (2016).

1. Origin of fine oscillations in the photoluminescence spectrum of 2-dimensional electron gas formed in AlGaN/GaN high electron mobility transistor structures, Dipankar Jana, S. Porwal, Anubha Jain, S. M. Oak, and T. K. Sharma, J. Appl. Phys. 118, 164502 (2015).
   
   
2. Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN, Abhishek Chatterjee, Shailesh K. Khamari, V. K. Dixit, S. M. Oak, and T. K. Sharma, J. Appl. Phys. 118, 175703 (2015).
   
   
3. A spin-optoelectronic detector for the simultaneous measurement of the degree of circular polarization and intensity of a laser beam, Shailesh K. Khamari, S. Porwal, S. M. Oak, and T. K. Sharma, Appl. Phys. Lett. 107, 072108 (2015).
   
   
4. Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers, Abhishek Chatterjee, Shailesh K. Khamari, R. Kumar, V. K. Dixit, S. M. Oak, and T. K. Sharma, Appl. Phys. Lett. 106, 023509 (2015).
   
   
5. Probing Carrier Dynamics of Individual Layers in a Heterostructure using Transient Reflectivity, Salahuddin Khan, J. Jayabalan, Asha Singh, Rachana Yogi, Rama Chari, Appl. Phys. Lett. 107, 121905 (2015).
   
   
6. Studies on non-radiative recombination in a two-dimensional electron gas formed in AlGaAs-GaAs heterostructure, Salahuddin Khan, Asha Singh, Rachana Yogi, J. Jayabalan and Rama Chari, Int. J. Appl. Eng. Res. 10, 27646 (2015).
   
   
7. Evaluation of structural and microscopic properties of tetragonal ZrO2 for the facet coating of 980 nm semiconductor laser diodes, V K Dixit, A Marathe, G Bhatt, S K Khamari, K Rajiv, R Kumar, C Mukherjee, C J Panchal, T. K. Sharma and S M Oak, J. Phys. D: Appl. Phys. 48, 105102 (2015).
   
   
8. V. K. Dixit, Shailesh K. Khamari, Sapna Manwani, S. Porwal, K. Alexander, T. K. Sharma, S. Kher, and S. M. Oak, “Effect of high dose γ-ray irradiation on GaAs p-i-n photodetectors”, Nuclear Instrum. & Meth. Phys. Res. A 785, 93 (2015).
   
   
9. Crystalline and band alignment properties of InAs/Ge (111) heterostructure, S. Pal, S. D. Singh, V. K. Dixit, T. K. Sharma, R. Kumar, A. K. Sinha, V. Sathe, D. M. Phase, C. Mukherjee, A. Ingale, J. Alloys and Compounds 646, 393 (2015).
   
   
10. Modification in structure of La and Nd codoped epitaxial BiFeO3 thin films probed by micro Raman spectroscopy, A. Ahlawat, S. Satapathy, V. G. Sathe, R. J. Choudhary, M. K. Singh, Ravi Kumar, T. K. Sharma, and P. K. Gupta, J. Raman Spectroscopy 46, 636 (2015).
    
    
11. Observation of low resistivity and high mobility in Ga doped ZnO thin films grown by buffer assisted pulsed laser deposition, R. S. Ajimsha, Amit K. Das, P. Misra, M.P. Joshi, L.M. Kukreja, R. Kumar, T. K. Sharma, S.M. Oak, J. Alloys and Comp. 638, 55 (2015).
    
    
12. Absence of low temperature phase transitions and enhancement of ferroelectric transition temperature in highly strained BaTiO3 epitaxial films grown on MgO Substrates, Satish Kumar, Dhirendra Kumar, V. G. Sathe, Ravi Kumar, and T. K. Sharma, J. Appl. Phys. 117, 134103 (2015).
    
    
13. Controlling phase separation in La5/8−yPryCa3/8MnO3 (y = 0.45) epitaxial thin films by strain disorder, Dileep K. Mishra, V. G. Sathe, R. Rawat, V. Ganesan, Ravi Kumar, and T. K. Sharma, Appl. Phys. Lett. 106, 072401 (2015).

1. Quantum beats from the coherent interaction of hole states with surface state in near-surface quantum well, Salahuddin Khan, J. Jayabalan, Rama Chari, Suparna Pal, Sanjay Porwal, Tarun Kumar Sharma and S. M. Oak, Appl. Phys. Lett. 105, 073106 (2014).
   
   
2. Modulations in low-temperature transient reflectivity measurements, Salahuddin Khan, Rama Chari, J. Jayabalan, Suparna Pal, T. K. Sharma, A. K. Sagar, M. S. Ansari and P. K. Kush, Surf. Rev. Lett. 21, 1450005 (2014).
   
   
3. Coherent oscillations of holes in GaAs0.86P0.14/Al0.7Ga0.3As surface quantum well, Salahuddin Khan, J. Jayabalan, Rama Chari, Asha Singh, S. Porwal, Suparna Pal, T. K. Sharma and S. M. Oak, Pramana 82, 359 (2014).
   
   
4. Tunable third-harmonic probe for non-degenerate ultrafast pump-probe measurements, Asha Singh, Salahuddin Khan, Podili Sivasankaraiah, J. Jayabalan, and Rama Chari, Pramana 82, 413 (2014).
   
   
5. Size independent Peak Shift between Normal and Upconversion Photoluminescence in MPA capped CdTe Nanoparticles, S. Ananthakumar, J. Jayabalan, Asha Singh, Salahuddin Khan, Subhash Prajapati, S. Moorthy Babu, and Rama Chari., Pramana 82, 353, (2014).

1. Effect of light-hole tunneling on the excitonic properties of GaAsP/AlGaAs near-surface quantum wells, Suparna Pal, S. D. Singh, S. Porwal, T. K. Sharma, S. Khan, J. Jayabalan, Rama Chari, and S. M. Oak, Semicond. Sci. Technol. 28, 035016 (2013).
   
   
2. Multi-photon induced photoluminescence in TGA capped CdTe nanoparticles, J. Jayabalan, S. Ananthakumar, S. Khan, Asha Singh, Puspen Mondal, A. K. Srivastava, S. Moorthy Babu, and Rama Chari, Asian J. Chem. 25, S42 (2013).
   
   
3. Volume fraction dependence of transient absorption signal and nonlinearities in metal nanocolloids, J. Jayabalan, Asha Singh, Salahudin Khan and Rama Chari, J. Opt. 15, 055203 (2013).
   
   
4. Effect of Mg diffusion on photoluminescence spectra of MgZnO/ZnO bi-layers annealed at different temperatures, Amit K. Das, P. Misra, R. S. Ajimsha, A. Bose, S. C. Joshi, S. Porwal, T. K. Sharma, S. M. Oak, and L. M. Kukreja, J. Appl. Phys. 114, 183103 (2013).
   
   
5. Inter-subband plasmon-phonon coupling in GaAsP/AlGaAs near surface quantum well, R. Aggarwal, Alka A. Ingale, Suparna Pal, V. K. Dixit, T. K. Sharma, and S. M. Oak, Appl. Phys. Lett. 102, 181120 (2013).
   
   
6. Raman tensor and domain structure study of single-crystal-like epitaxial films of CaCu3Ti4O12 grown by pulsed laser deposition, A. Ahlawat, D. K Mishra, V. G. Sathe, R. Kumar and T. K. Sharma, J. Phys.: Condens. Matter 25, 025902 (2013).
   
   
7. Studies on ensembles of luminescent silicon nanoparticles embedded in silicon nitride grown by pulsed laser deposition, A. P. Detty, B. N. Singh, V. K. Sahu, P. Misra, R. Kumar, T. K. Sharma, V. G. Sathe, D. M. Phase, A. K. Srivastava, S. M. Oak, V. P. M. Pillai, L. M. Kukreja, J. Nanosci. Lett. 3, 14 (2013).
   
   
8. Structural, electrical and optical characteristics of Al doped ZnO films grown by sequential pulsed laser deposition, Amit K. Das, P. Misra, A. Bose, S. C. Joshi, R. Kumar, T. K. Sharma, L. M. Kukreja, Phys. Express 3, 5 (2013).

1. Evaluation of electronic transport properties and conduction band offsets of asymmetric InAs/InxGa1−xAs/GaAs dot-in-well structures, V. K. Dixit, S. K. Khamari, C. Tyagi, S. D. Singh, S. Porwal, R. Kumar, C. Mukherjee, P. Mondal, A. K. Srivastava, T. K. Sharma and S. M. Oak, J. Phys. D: Appl. Phys. 45, 365104 (2012).
   
   
2. Third-order nonlinearity of metal nanoparticles: Isolation of instantaneous and delayed contributions, J. Jayabalan, Asha Singh, Salahudin Khan, and Rama Chari, J. Appl. Phys. 112, 103524 (2012).
   
   
3. Response to Comment on ‘Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition, P. Misra, T. K. Sharma, S. Porwal, and L. M. Kukreja, [Appl. Phys. Lett. 101, 256101 (2012)], Appl. Phys. Lett. 101, 256102 (2012).
   
   
4. Band alignment and quantum states of InAsxP1-x/InP surface quantum wells investigated from ultraviolet photoelectron spectroscopy and photoluminescence, V. K. Dixit S. Kumar, S. D. Singh, S. Porwal, T. K. Sharma, S .M .Oak, Materials Letters 87, 69 (2012).
   
   
5. Elastic-relaxation-induced barrier layer thickness undulations in InP/GaAs type-II quantum well superlattice structures, S. D. Singh, R. Kumar, C. Mukherjee, Pushpen Mondal, A K Srivastava, T. Ganguli, T. K. Sharma and S. M. Oak, Semicond. Sci. Technol. 27, 105031 (2012).
   
   
6. Signature of optical absorption in highly strained and partially relaxed InP/GaAs type-II quantum well superlattice structures, S. D. Singh, S. Porwal, T. K. Sharma, and S. M. Oak, J. Appl. Phys. 112, 093505 (2012).
   
   
7. MOVPE and MBE growth of semiconductor thin films, T. K. Sharma, AIP Conf. Proc. 1451, 18 (2012).

1. Origin and the time dependence of higher-order nonlinearities in metal nanocomposites, J. Jayabalan, J. Opt. Soc. Am. B, 28, 2448-2455 (2011).
   
   
2. Effect of built-in electric field on the temperature dependence of transition energy for InP/GaAs type-II superlattices, S. D. Singh, S. Porwal, A. K. Srivastava, T. K. Sharma, and S. M. Oak, J. Appl. Phys. 110, 123523 (2011).
   
   
3. SHORTWAVE SEMICONDUCTOR LASERS: Lattice constant is key to group III-nitride-based UV light emitters, E. Towe and T. K. Sharma, Laser Focus World 47 (9), (2011).
   
   
4. Strain-driven light polarization switching in deep ultraviolet nitride emitters, T. K. Sharma, Doron Naveh, and E. Towe, Phys. Rev. B. 84, 035305 (2011).
   
   
5. Why are nitride lasers limited to the spectral range from ~340 to 530 nm? T. K. Sharma and E. Towe, Phys. Status Solidi C 8, 2366 (2011).
   
   
6. Impact of strain on deep ultraviolet nitride laser and light-emitting diodes, T. K. Sharma and E. Towe, J. Appl. Phys. 109, 086104 (2011).

1. Tuning the Localized Surface Plasmon Resonance of Silver Nanoplatelet Colloids, Asha Singh, J. Jayabalan, Rama Chari, Himanshu Srivastava, and S. M. Oak, J. Phys. D: App. Phys., 43, 335401 (2010).
   
   
2. Effect of edge smoothening on the extinction spectra of metal nanoparticles, J. Jayabalan, Asha Singh, and Rama Chari, App. Phys. Lett., 97, 041904 (2010).
   
   
3. Measuring a narrow Bessel beam spot by scanning a charge coupled device (CCD)-pixel, S. K. Tiwari, S. P. Ram, J. Jayabalan and S. R. Mishra, Meas. Sci. Technol., 21, 025308 (2010).
   
   
4. Particular Features of higher harmonics generation in nanoclusters containing plasma using single and two color pumps, R. A. Ganeev, H. Singhal, P. A. Naika, J. A. Chakera, M. Tayyab, A. K. Srivastava, T. S. Dhami, M. P. Joshi, A. Singh, R. Chari, S. R. Kumbhare, R. P. Kushwaha, R. A. Khan, R. K. Bhat, and P. D. Gupta, Opt & Spectro. 108, 787-803 (2010).
   
   
5. Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells, S. D. Singh, V. K. Dixit, S. Porwal, Ravi Kumar, A. K. Srivastava, Tapas Ganguli, T. K. Sharma, and S. M. Oak, Appl. Phys. Lett. 97, 111912 (2010).
   
   
6. On ternary nitride substrates for visible semiconductor light-emitters, T. K. Sharma and E. Towe, Appl. Phys. Lett. 96, 191105 (2010). Appeared in the headline news of Semiconductor Today Magazine, 17 May 2010 issue.
   
   
7. Application-oriented nitride substrates: the key to long-wavelength nitride lasers beyond 500 nm, T. K. Sharma and E. Towe, J. Appl. Phys. 107, 024516 (2010). Appeared in the headline news of Semiconductor Today Magazine, 8 Feb 2010 issue.
   
   
8. Temperature dependence photo-luminescence of Nd3+ doped PLZT ceramic, Gurvinderjit Singh, V. S. Tiwari, T. K. Sharma and P. K. Gupta, J Electroceramics 25, 89 (2010).

1. Transient Absorption and Higher-order Nonlinearities in Silver Nanoplatelets, J. Jayabalan, Asha Singh, Rama Chari, Salahuddin Khan, Himanshu Srivastava, and S. M. Oak, App. Phys. Lett., 94, 181902 (2009).
   
   
2. A method for evaluating the ground state excitonic band gaps of strained InxGa1−xN/GaN quantum wells, T. K. Sharma and E. Towe, J. Appl. Phys. 106, 104509 (2009).
   
   
3. Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells, T. K. Sharma, R. Jangir, S. Porwal, R. Kumar, Tapas Ganguli, M. Zorn, U. Zeimer, F. Bugge, M. Weyers, and S. M. Oak, Phy. Rev B 80, 165403 (2009).
   
   
4. A method of obtaining simultaneous complementary spectroscopic information on self-assembled quantum dots, T. K. Sharma and T. J. C. Hosea, Jpn. J. Appl. Phys. 48, 082301(2009).
   
   
5. Fourier Transform Infrared Surface Photovoltage Spectroscopy for the investigation of mid-infrared semiconductor lasers, T. K. Sharma, N. Fox and T. J. C. Hosea, Phys. Stat. Solidi (a) 206, 808 (2009).
   
   
6. Room temperature characterization of novel InGaAlAs quantum well laser structures using electro-modulated reflectance and surface photovoltage spectroscopy, Natasha E. Fox, T. K. Sharma, Stephen J. Sweeney, and T. J. C. Hosea, Phys. Stat. Solidi (a) 206, 796 (2009).
   
   
7. Temperature Dependent Photoluminescence Processes in ZnO Thin Films Grown on Sapphire by Pulsed Laser Deposition, P. Misra, T. K. Sharma and L. M. Kukreja, Current Applied Physics, 9, 179 (2009).

1. Aggregated nanoplatelets: optical properties and optically induced deaggregation, J Jayabalan, Asha Singh, Rama Chari, Himanshu Srivastava, P. K. Mukhopadhaya, A. K. Srivastava, and S. M. Oak, J. Phys:Condens. Matter, 20, 445222 (2008).
   
   
2. Linear and nonlinear second-order polarizabilities of hemispherical and sector-shaped metal nanoparticles, J. Jayabalan, M. P. Singh, A. Banerjee and K. C. Rustagi, Phys. Rev. B., 77, 045421 (2008).
   
   
3. An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for mid-IR lasers using simultaneous complementary spectroscopic techniques, T. K. Sharma, T. J. C. Hosea, S. J. Sweeney and X. Tang, J. Apply. Phys. 104, 083109 (2008).
   
   
4. Room temperature observation of the energy levels of mid-infrared QW lasers by FTIR-SPS, T. K. Sharma, N. Fox and T. J. C. Hosea, G. R. Nash, S. D. Coomber, L. Buckle, M. T. Emeny and T. Ashley, Appl. Phys. Express, 1, 062001 (2008).
   
   
5. Optimization of GaP epitaxial layer grown by MOVPE on GaP (111)B Substrates, T. K. Sharma, V. K. Dixit, Tapas Ganguli, S. D. Singh, S. Porwal, R. Kumar, P. Tiwari and A. K. Nath, Semicond. Science and Technol., 23, 075031 (2008).
   
   
6. Simple low-cost technique for in-situ reflectivity monitoring of optical thin-films and its application in laser diode facets-coating, V.A. Kheraj, C.J. Panchal, M.S. Desai and T. K. Sharma, Journal of Optics 37, 106 (2008).
   
   
7. Effect of two step growth process on structural, optical and electrical properties of MOVPE grown GaP/Si, V. K. Dixit, Tapas Ganguli, T. K. Sharma, S. D. Singh, Ravi Kumar, S. Porwal, Pragya Tiwari, Alka Ingale and S. M. Oak, J. Crystal Growth 310, 3428 (2008).
   
   
8. Impact of growth parameters on structural and optical properties of InP/GaAs type-II quantum dots grown by metal organic vapour phase epitaxy, S. D. Singh, T. K. Sharma, S. Porwal, C. Mukherjee and S. M. Oak, IEEE Xplore, 9858893, 439, (2008).
   
   
9. Comparative Studies on As-grown and Nanotextured GaN:Mg Epilayer, S. Pal, A. Ingale, V. K. Dixit, T. Ganguli, T. K. Sharma, S. Porwal, R. Kumar and S. M. Oak, IEEE Xplore, 9866656, 419, (2008).
   
   
10. Studies on GaAs/AlGaAs based (p and n-type) quantum well infrared photodetector structures grown using metal organic vapour phase epitaxy, V. K. Dixit, S. D. Singh, T. K. Sharma, Tapas Ganguli, Suparna Pal, B. Q. Khattak and S. M. Oak, IEEE Xplore, 9858874, 355, (2008).

1. Ultrafast third-order nonlinearity of silver nanospheres and nanodiscs, J. Jayabalan, A. Singh, R. Chari and S. M. Oak, Nanotechnology, 18, 315704 (2007).
   
   
2. Growth of strained ZnSe films on GaAs substrates by Pulsed laser deposition carried out in an off-axis deposition geometry, Tapas Ganguli, Alka Ingale, Sanjay Porwal, T. K. Sharma, Pragya Tiwari, R.V.Nandedkar, S.Rajagopalan, A.K.Balamurugan, A.K.Tyagi, and K.C.Rustagi, Thin Solid Films, 515, 7834 (2007).
   
   
3. Temperature Dependent Photoluminescence from Ultra-thin ZnO Quantum Wells Grown on (0001) Sapphire using Buffer Assisted Pulsed Laser Deposition, Pankaj Misra, T. K. Sharma and L. M. Kukreja,Supperlattices and Microstructures, 42,212 (2007).
   
   
4. Optimization of Facet Coating for Highly Strained InGaAs Quantum Well Lasers operating at 1200 nm”, V. A. Kheraj, C. J. Panchal, P. K. Patel, B. M. Arora and T. K. Sharma, Optics & Laser Technology 39,1395 (2007).
   
   
5. A comparative study on nanotextured high density Mg-doped and undoped GaN, S. Pal, A. Ingale, V. K. Dixit, T. K. Sharma, S. Porwal, P. Tiwari and A. K. Nath, J. Appl. Physics 101, 044311 (2007).
   
   
6. Spectroscopic characterization of InGaAs/GaAs Quantum wells with low and high built-in strain, T. K. Sharma, S. D. Singh, S. Porwal and A. K. Nath, J. Crystal Growth, 298, 527 (2007).
   
   
7. Surface Photovoltage and Photoelectron Spectra of GaP, Shailendra Kumar, D. M. Phase, Sanjay Porwal and T. K. Sharma, Solid State Communication, 141, 284 (2007).

1. Single Shot Measurement of Nonlinear Absorption and Nonlinear Refraction, J. Jayabalan, A. Singh, and S. M. Oak, App. Opt., 45, 3852 (2006).
   
   
2. Room Temperature Photoluminescence from ZnO Quantum Wells Grown on(0001) Sapphire using Buffer Assisted Pulsed Laser Deposition, Pankaj Misra, T. K. Sharma, Sanjay Porwal and L. M. Kukreja, Appl. Phys. Letters, 89, 161912 (2006).
   
   
3. Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealing, V. K. Dixit, Tapas Ganguli, T. K. Sharma, Ravi Kumar, S. Porwal, Vijay Shukla, Alka Ingale, Pragya Tiwari and A. K. Nath, J. Crystal Growth, 293, 5 (2006).
   
   
4. Temperature dependence of the lowest excitonic transition for an InAs ultra-thin quantum well, S. D. Singh, S. Porwal, T. K. Sharma and K. C. Rustagi, J. Appl. Phys 99, 063517 (2006).
   
   
5. In-Situ Reflectivity Measurement for Anti-Reflection Coating on Laser Diode Facet, Chetan Panchal, Vipul Kheraj, Pravin Patel, Krunal Pandya and T. K. Sharma, SPIE Vol No. 6286, 62860H, Advances in Thin-Film Coatings for Optical Applications III; Michael J. Ellison (Ed.), August 2006.

1. Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2 mm, T. K. Sharma, M. Zorn, U. Zeimer, H. Kissel, F. Bugge, and M. Weyers, Crystal Research & Technology 40 (9), 877 (2005).
   
   
2. Effect of facet reflectivities on high-power highly strained InGaAs quantum-well diode lasers operating at 1.2 μm, C. J. Panchal, V. A. Kheraj, K. M. Patel, P. K. Patel, B. M. Arora, T. K. Sharma, SPIE Vol. 6028, p. 35-41, ICO20: Lasers and Laser Technologies; Y. C. Chen, Dianyuan Fan, Chunqing Gao, Shouhuan Zhou; Eds., Dec 2005.

1. Enhancement of linear and second-order hyperpolarizabilites in wedge shaped nanostructures, J. Jayabalan, M. P. Singh and K. C. Rustagi, Phys. Rev. B., 68, 075319 (2003).
   
   
2. A Parametric study of negative feedback Nd:YAG laser, J. Jayabalan, R. A. Ganeev, A. Singh and S. M. Oak, Opt. and Laser Tech., 35, 613 (2003).
   
   
3. Highly strained very high-power laser diodes with InGaAs QWs, F. Bugge. M. Zorn, U. Zeimer, T. Sharma, H. Kissel, R. Huelsewede, G. Erbert, M. Weyers, J. Crystal Growth, 248, 354 (2003).

1. Frequency and Intensity dependence of the sub band gap features observed in the SPV spectrum of SI-GaAs, T. K. Sharma, Shailendra Kumar and K. C. Rustagi, J. Appl. Phys. 92, 5959 (2002).
   
   
2. High power highly strained InGaAs quantum well lasers operating at 1.2 m, T. K. Sharma, M. Zorn, U. Zeimer, H. Kiessel, F. Bugge and M. Weyers, IEEE Photon. Technol. Lett. 14(7), 887 (2002).
   
   
3. Effect of growth temperature on strain barrier for MOVPE grown strained InGaAs quantum well with lattice matched InGaAsP barriers, T. K. Sharma, B. M. Arora, S. Kumar and M. R. Gokhale, J. Appl. Phys., 91 (9) 5875 (2002).
   
   
4. Absorption edge determination of thick GaAs wafers using surface photovoltage spectroscopy, T. K. Sharma, S. Porwal, R. Kumar and S. Kumar, Rev. Sci. Inst. 73, 1835(2002).
   
   
5. Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma assisted pulsed laser deposition, P. Bhattacharya, T. K. Sharma, S. Singh, Alka Ingale and L.M. Kukreja, J. Crystal Growth., 236, 5(2002).

1. Generation of extended trains of compressed pico-second pulses with stable energy and time characteristics in a Nd:YAG laser with passive negative feedback, J. Jayabalan, R. A. Ganeev, and S. M. Oak, Opt. Spectrosc., 91, 136 (2001). 153. Surface photovoltage spectroscopy of semi-insulating GaAs in the 800nm-1100nm range, T. K. Sharma and S. Kumar, Appl. Phys. Lett., 79(11), 1715(2001).

1. Long wavelength photoluminescence from InGaP/GaAs heterointerfaces grown by metal organic vapor phase epitaxy, T. K. Sharma, M. R. Gokhale and B. M. Arora, J. Cryst. Growth Vol. 213(3-4), pg. 241-248, May 2000.
   
   
2. Indium Thallium Phosphide: experiments versus predictions, S. S. Chandvankar, T. K. Sharma, A. P. Shah, K. S. Chandrasekaran, B. M. Arora, A. K. Kapoor, Devendra Verma and B. B. Sharma, J. Cryst.Growth Vol. 213 (3-4), pg. 249-258, May 2000.
   
   
3. Characterization of InGaP/GaAs heterointerfaces Grown by Metal Organic Vapour Phase Epitaxy, T. K. Sharma, B. M. Arora, M. R. Gokhale and S. Rajgopalan, J. Crystal Growth Vol. 221(1-4), pg. 509-514, Dec 2000.
   
   
4. Synthesis of TIP and indium thallium phosphide, S. S. Chandvankar, T. K. Sharma, A. P. Shah, K. S. Chandrasekaran, B. M. Arora, A. K. Kapoor, Devendra Verma and B. B. Sharma, SPIE Vol. 3975, Physics of Semiconductor Devices Vikram Kumar and S.K. Agarwal, Eds., p.215, 2000.

1. Short interval open tube Zn diffusion in GaAs at low temperatures, T. K. Sharma, A. P. Shah, M. R. Gokhale, C. J. Panchal and B. M. Arora, Semicond. Sci. Technol. Vol. 14, 327 (1999).

1. Polarization anisotropy of sub band gap oscillatory features in contactless electroreflectance spectrum of InxGa1-xP layers grown on GaAs (001) substrates, Sandip Ghosh, B. M. Arora, T. K. Sharma and M. R. Gokhale, J. Appl. Phys. Vol. 83(10), 5442 (1998).
   
   
2. InGaP/GaAs Material System - Problem of Interfaces MOVPE Synthesis and Characterization, B. M. Arora, T. K. Sharma, K. S. Chandrasekaran, M. Gokhale and A. Shah, SPIE Vol. 3316, Physics of Semiconductor Devices Vikram Kumar and S.K. Agarwal, Eds., p.205, 1998.
   
   
3. Surface Photovoltage Spectroscopic Study of ZnSe Films Deposited on n+ GaAs, Shailendra Kumar, Tapas Ganguli, Tarun Sharma, P Bhattacharya, L. M. Kukreja, SPIE Vol. 3316, Physics of Semiconductor Devices. Vikram Kumar and S.K. Agarwal, Eds., p.1193, 1998.
   
   
4. Metal organic vapour phase epitaxy of III-V compound semiconductors (Review article), B. M. Arora, T. K. Sharma, M. R. Gokhale and A. P. Shah, IVS Bulletin Vol. 1(1), 3(1998).