Angle integrated photoelectron spectroscopy (AIPES) beamline is designed to utilize photons in the energy range from 10 to 200 eV. The beamline operates at a vacuum better than 10-9 mbar. The basic requirements for carrying out the photoemission experiments are good photon flux and moderate resolution. Since toroidal grating monochromator (TGM) fulfil these two requirements, the present beamline is developed around it.
In order to have good reflectivity in this energy range, a grazing incidence-reflecting optics is used.
A toroidal pre-mirror which is kept at a distance 4000 mm from the source accepts radiation over horizontal and vertical acceptance angles of 10 and 2.5 mrad respectively.
The grazing angle of incidence at the mirror is about 4.5°, giving a deviation of 9° after reflection.
The reflected beam is brought to a focus at a distance of 2000 mm where the entrance slit of TGM is located.
The pre-mirror section is followed by a TGM (Jobin Yvon-TGM2634) which contains three interchangeable gratings to cover a photon energy range from 10 to 200 eV.
Monochromatized beam passing through an exit slit falls on post-focusing toroidal mirror.
Pt-coated post mirror refocuses the monochromatic beam from exit slit to a sample located at 990 mm with magnification 1:1.
Experimental station
The main components and schematic of the AIPES end-station are given below:
Main Components
Omicron hemispherical energy analyser (EA-125, Germany)
Electronic structure of rare-earth semiconducting ErN thin films determined with synchrotron radiation photoemission spectroscopy and first-principles analysis;
Krithika Upadhya, Rajendra Kumar, Madhusmita Baral, Shilpa Tripathi, S. N. Jha, Tapas Ganguli and Bivas Saha;
Physical Review B 105 (2022) 075138.
2.
Determination of band alignment in liquid exfoliated few-layer WSe2/SiO2 interface;
Rahul, Sunil K. Arora, S.N. Jha, Yogesh Kumar;
Materials Letters, 311 (2022) 131600.
1.
Study of band alignment at MoS2/SiO2 interfaces grown by pulsed laser deposition method,
Sneha Sinha, Sujit Kumar, Sunil K. Arora, S.N. Jha, Yogesh Kumar, Vinay Gupta and Monika Tomar,
Journal of Applied Physics 129 (2021) 115303.
“Synthesis and Characterization of Pure and Nd-Doped Monazite”,
Yogesh Kumar, S. N. Jha, A. Arya, R. K. Sharma and V. Srihari,
AIP Conference Proceedings 2265, 030290 (2020); 64th DAE Solid State Physics Symposium, December 18-22 (2019) Indian Institute of Technology Jodhpur.
2.
Partial density of 3d electrons in CrSi probed by resonant photoemission,
Soma Banik, Shilpa Tripathi, and S. N. Jha
AIP Conference Proceedings 2265 (2020) 030366.
3.
Development of UHV pulsed laser deposition set-up for in-situ photoelectron spectroscopic study at ARPES beamline, Indus-1 synchrotron radiation source, India,
Mangla Nand, Yogesh Kumar, Ashutosh Dwivedi, Shilpa Tripathi, Babita, R. J. Choudhary, S. N. Jha,
Nuclear Inst. and Methods in Physics Research, A 986 (2021) 164805.
4.
Structural and optical properties of transparent, tunable bandgap semiconductor: α-(AlxCr1-x)2O3,
Ravindra Jangir, Velaga Srihari, Ashok Bhakar, C. Kamal, A. K. Yadav, P. R. Sagdeo, Dharmendra Kumar, Shilpa Tripathi, S. N. Jha, and Tapas Ganguli,
Journal of Applied Physics 128 (2020) 135703.
5.
Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization;
Soma Banik, M. K. Chattopadhyay, Shilpa Tripathi, R. Rawat & S. N. Jha;
Scientific Reports, 10 (2020), 12030.
6.
Investigations on epitaxy and lattice distortion of sputter deposited β-Ga2O3 layers on GaN templates;
Sahadeb Ghosh, Himanshu Srivastava, P. N. Rao, Mangla Nand, Pragya Tiwari, Arvind Srivastava, S. N. Jha, Sanjay Rai, Shreyashkar Singh, Tapas Ganguli,
Semiconductor Science and Technology, 35 (2020), 085024.
7.
Crystalline Bi2Se3 topological insulator films prepared by dc magnetron sputtering;
R. Kumar, A. K. Yadav, A. Biswas, Mangla Nand, J. Bahadur, S. Ghosh, S. N. Jha, D. Bhattacharyya ;
Vacuum, 177 (2020) 109366.
8.
Localization of electronic states resulting from electronic topological transitions in the Mo1−xRex alloys: A photoemission study; L S Sharath Chandra, Shyam Sundar, Soma Banik, S. K. Ramjan, K. K. Chattopadhyay, S.N. Jha & S B Roy, J. Appl. Phys. 127 (2020) 163906.
9.
Study of valence band electronic states of near-surface atoms of niobium used for superconducting cavity;
Nageshwar Singh, Mangla Nand S. N. Jha and S. Raghavendra;
J. Electron. Spectrosc. Relat. Phenom. 240 (2020) 146942.
10.
Si compatible MoO3/MoS2 core-shell quantum dots for wavelength tunable photodetection in wide visible range;
Suparna Pal, Subhrajit Mukherjee, Mangla Nand, Himanshu Srivastava, H. S. Patel, S. K. Rai, C. Mukherjee, S. N. Jha, S. K. Ray;
Applied Surface Science, 502 (2020) 144196.
1.
Effect of Y2O3 doping on HfO2 thin film prepared by pulsed laser deposition (PLD): XPS studies,
Mangla Nand, P. Rajput, R. J. Choudhary, S. N. Jha,
AIP Conference Proceedings 2115 (1) (2019) 030330.
2.
Electrical and optical properties of low-bandgap oxide Zn2Mo3O8 for optoelectronic applications,
Pramod Ravindra, Madhusmita Baral, Tathagata Biswas, Mangla Nand, SN Jha, Eashwer Athresh, Rajeev Ranjan, Manish Jain, Tapas Ganguli, Sushobhan Avasthi,
Thin Solid Films 677 (2019) 95-102.
1.
Studies on structural and optical gap tunability in a-(GaxCr(1-x))2O3 solid solutions,
Ravindra Jangir, Dharmendra Kumar, Velaga Srihari, Ashok Bhakar, A.K. Poswal, P.R. Sagdeo, Mangla Nand, S.N. Jha, Pragya Tiwari, Tapas Ganguli,
Journal of Alloys and compounds 766 (2018) 876.
1.
Epitaxial growth and band alignment properties of NiO/GaN heterojunction for light emitting diode applications,
Kiran Baraik, S. D. Singh, Yogesh Kumar, R. S. Ajimsha, P. Misra, S. N. Jha, and Tapas Ganguli,
Appl. Phys. Lett. 110 (2017) 191603. doi: 10.1063/1.4983200.
2.
Band alignment and charge transfer pathway in three phase anatase-rutile-brookite TiO2 nanotubes: An efficient photocatalyst for water splitting,
L.K. Preethi, Tom Mathews, Mangla Nand, S.N. Jha, Chinnakonda S. Gopinath, S. Dash,
Applied Catalysis B: Environmental 218 (2017) 9–19.
3.
Effect of dry air on interface smoothening in reactive sputter deposited Co/Ti multilayer,
A. Biswas, A. Porwal, Debarati Bhattacharya, C. L. Prajapat, Arnab Ghosh, Mangla Nand, C. Nayak, S. Raif, S. N. Jha, M. R. Singh, D. Bhattacharyya, S. Basu, N. K. Sahoo,
Applied Surface Science 416 (2017) 168–177.
4.
Highly Acidic, Thermal Stable NbPO4@Fullerene Catalyst for Dehydration of Cyclohexanol,
Sneha Shah,Nidhi Tiwari, Yogesh Kumar, S. N. Jha, Aline Auroux, Jai K. Pandey, and Biswajit Chowdhury,
Chemistry Select, 2 (2017) 5640-5645.
1.
Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron-based X-ray techniques,
S. D. Singh, Mangla Nand, Arijeet Das, R. S. Ajimsha, Anuj Upadhyay, Rajiv Kamparath, D. K. Shukla, C. Mukherjee, P. Misra, S. K. Rai, A. K. Sinha, S. N. Jha, D. M. Phase, and Tapas Ganguli,
Journal of Applied Physics 119 (2016) 165302.
2.
Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications,
S. D. Singh, Mangla Nand, R. S. Ajimsha, Anuj Upadhyay, Rajiv Kamparath, C. Mukherjee, P. Misra, A. K. Sinha, S. N. Jha, and Tapas Ganguli,
Applied Surface Science 389 (2016) 835.
3.
Raman and photoelectron spectroscopic investigation of high-purity niobium materials: Oxides, hydrides, and hydrocarbons,
Nageshwar Singh, M.N. Deo, Mangla Nand, S.N. Jha, and S.B. Roy,
Journal of Applied Physics 120 (2016) 114902.
4.
Interface structure in nanoscale multilayers near continuous-to-discontinuous regime,
P. C. Pradhan, A. Majhi, M. Nayak, Mangla Nand, P. Rajput, D. K. Shukla, A. Biswas, S. K. Rai, S. N. Jha, D. Bhattacharyya, D. M. Phase, and N. K. Sahoo,
Journal of Applied Physics 120 (2016) 045308.
5.
Electronic Structure of FeAl Alloy Studied by Resonant Photoemission Spectroscopy and Ab Initio Calculations,
Debashis Mondal, Soma Banik, C. Kamal, Mangla Nand, S. N. Jha, D. M. Phase, A. K. Sinha, Aparna Chakrabarti, A. Banerjee, Tapas Ganguli,
Journal of Alloys and Compounds, 688 (2016) 187.
